Biography
Xiaowei Feng received his Bachelor degree from Tongji University, China, in Systems Engineering and Automation in 2013. He then started his Master of Electrical Engineering at RWTH Aachen University and completed his degree in 2016. For 2 years he did the research in the area of noise modeling and analysis in the sensor applications. Since May 2017, he has started as a Ph.D. student at Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT). His current research interest includes device characterization, compact modeling and circuit design in the field of printed electronics.
Publication
Characterization and compact modeling of printed electrolyte-gated thin film transistors and circuits. PhD dissertation
Feng, X.
2021, September 30. Karlsruher Institut für Technologie (KIT). doi:10.5445/IR/1000137975
Feng, X.
2021, September 30. Karlsruher Institut für Technologie (KIT). doi:10.5445/IR/1000137975
Low-frequency Noise Characteristics of Inkjet-Printed Electrolyte-gated Thin-Film Transistors
Feng, X.; Singaraju, S. A.; Hu, H.; Marques, G. C.; Fu, T.; Baumgartner, P.; Secker, D.; Tahoori, M. B.; Aghassi-Hagmann, J.
2021. IEEE Electron Device Letters, 42 (6), 843–846. doi:10.1109/LED.2021.3072000
Feng, X.; Singaraju, S. A.; Hu, H.; Marques, G. C.; Fu, T.; Baumgartner, P.; Secker, D.; Tahoori, M. B.; Aghassi-Hagmann, J.
2021. IEEE Electron Device Letters, 42 (6), 843–846. doi:10.1109/LED.2021.3072000
Facile Approach to Conductive Polymer Microelectrodes for Flexible Electronics
Wang, Z.; Cui, H.; Li, S.; Feng, X.; Aghassi-Hagmann, J.; Azizian, S.; Levkin, P. A.
2021. ACS Applied Materials and Interfaces, 13 (18), 21661–21668. doi:10.1021/acsami.0c22519
Wang, Z.; Cui, H.; Li, S.; Feng, X.; Aghassi-Hagmann, J.; Azizian, S.; Levkin, P. A.
2021. ACS Applied Materials and Interfaces, 13 (18), 21661–21668. doi:10.1021/acsami.0c22519
An Inkjet-Printed Full-Wave Rectifier for Low-Voltage Operation Using Electrolyte-Gated Indium-Oxide Thin-Film Transistors
Feng, X.; Scholz, A.; Tahoori, M. B.; Aghassi-Hagmann, J.
2020. IEEE transactions on electron devices, 67 (11), 4918–4923. doi:10.1109/TED.2020.3020288
Feng, X.; Scholz, A.; Tahoori, M. B.; Aghassi-Hagmann, J.
2020. IEEE transactions on electron devices, 67 (11), 4918–4923. doi:10.1109/TED.2020.3020288
Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits
Ulianova, V.; Rasheed, F.; Bolat, S.; Sevilla, G. T.; Didenko, Y.; Feng, X.; Shorubalko, I.; Bachmann, D.; Tatarchuk, D.; Tahoori, M. B.; Aghassi-Hagmann, J.; Romanyuk, Y. E.
2020. IEEE access, 8, 111783–111790. doi:10.1109/ACCESS.2020.3002267
Ulianova, V.; Rasheed, F.; Bolat, S.; Sevilla, G. T.; Didenko, Y.; Feng, X.; Shorubalko, I.; Bachmann, D.; Tatarchuk, D.; Tahoori, M. B.; Aghassi-Hagmann, J.; Romanyuk, Y. E.
2020. IEEE access, 8, 111783–111790. doi:10.1109/ACCESS.2020.3002267
A printed rectifier based on inkjet-printed electrolyte-gated inorganic transistors
Feng, X.; Scholz, A.; Tahoori, M.; Aghassi-Hagmann, J.
2020. Internationale Fachmesse und Kongress für gedruckte Elektronik (LOPEC 2020), Munich, Germany, March 24–26, 2020
Feng, X.; Scholz, A.; Tahoori, M.; Aghassi-Hagmann, J.
2020. Internationale Fachmesse und Kongress für gedruckte Elektronik (LOPEC 2020), Munich, Germany, March 24–26, 2020
Fabrication and Modeling of pn-Diodes Based on Inkjet Printed Oxide Semiconductors
Cadilha Marques, G.; Sukuramsyah, A. M.; Arnal Rus, A.; Bolat, S.; Aribia, A.; Feng, X.; Singaraju, S. A.; Ramon, E.; Romanyuk, Y.; Tahoori, M.; Aghassi-Hagmann, J.
2020. IEEE electron device letters, 41 (1), 187–190. doi:10.1109/led.2019.2956346
Cadilha Marques, G.; Sukuramsyah, A. M.; Arnal Rus, A.; Bolat, S.; Aribia, A.; Feng, X.; Singaraju, S. A.; Ramon, E.; Romanyuk, Y.; Tahoori, M.; Aghassi-Hagmann, J.
2020. IEEE electron device letters, 41 (1), 187–190. doi:10.1109/led.2019.2956346
Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates
Feng, X.; Marques, G. C.; Rasheed, F.; Tahoori, M. B.; Aghassi-Hagmann, J.
2019. IEEE transactions on electron devices, 66 (12), 5272–5277. doi:10.1109/TED.2019.2947787
Feng, X.; Marques, G. C.; Rasheed, F.; Tahoori, M. B.; Aghassi-Hagmann, J.
2019. IEEE transactions on electron devices, 66 (12), 5272–5277. doi:10.1109/TED.2019.2947787
Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors
Jeong, J.; Marques, G. C.; Feng, X.; Boll, D.; Singaraju, S. A.; Aghassi-Hagmann, J.; Hahn, H.; Breitung, B.
2019. Advanced materials interfaces, 6 (21), 1901074. doi:10.1002/admi.201901074
Jeong, J.; Marques, G. C.; Feng, X.; Boll, D.; Singaraju, S. A.; Aghassi-Hagmann, J.; Hahn, H.; Breitung, B.
2019. Advanced materials interfaces, 6 (21), 1901074. doi:10.1002/admi.201901074
Impact of Intrinsic Capacitances on the Dynamic Performance of Printed Electrolyte-Gated Inorganic Field Effect Transistors
Feng, X.; Punckt, C.; Marques, G. C.; Hefenbrock, M.; Tahoori, M. B.; Aghassi-Hagmann, J.
2019. IEEE transactions on electron devices, 66 (8), 3365–3370. doi:10.1109/TED.2019.2919933
Feng, X.; Punckt, C.; Marques, G. C.; Hefenbrock, M.; Tahoori, M. B.; Aghassi-Hagmann, J.
2019. IEEE transactions on electron devices, 66 (8), 3365–3370. doi:10.1109/TED.2019.2919933
Progress Report on “From Printed Electrolyte‐Gated Metal‐Oxide Devices to Circuits”
Cadilha Marques, G.; Weller, D.; Erozan, A. T.; Feng, X.; Tahoori, M.; Aghassi-Hagmann, J.
2019. Advanced materials, 31 (26), Article no: 1806483. doi:10.1002/adma.201806483
Cadilha Marques, G.; Weller, D.; Erozan, A. T.; Feng, X.; Tahoori, M.; Aghassi-Hagmann, J.
2019. Advanced materials, 31 (26), Article no: 1806483. doi:10.1002/adma.201806483
An Extended Meyer Capacitance Model of Inkjet-Printed Electrolyte-gated Inorganic Transistors
Feng, X.; Tahoori, M.; Aghassi-Hagmann, J.
2019. Internationale Fachmesse und Kongress für gedruckte Elektronik (LOPEC 2019), Munich, Germany, March 19–21, 2019
Feng, X.; Tahoori, M.; Aghassi-Hagmann, J.
2019. Internationale Fachmesse und Kongress für gedruckte Elektronik (LOPEC 2019), Munich, Germany, March 19–21, 2019
Experimental characterization of charge storage behavior of electrolyte gated field effect transistors based on oxide semiconductor
Feng, X.; Punckt, C.; Hefenbrock, M.; Tahoori, M.; Aghassi-Hagmann, J.
2018. Internationale Fachmesse und Kongress für gedruckte Elektronik (LOPEC 2018), Munich, Germany, March 14–15, 2018
Feng, X.; Punckt, C.; Hefenbrock, M.; Tahoori, M.; Aghassi-Hagmann, J.
2018. Internationale Fachmesse und Kongress für gedruckte Elektronik (LOPEC 2018), Munich, Germany, March 14–15, 2018
Analog Properties of Printed Electrolyte-Gated FETs based on Metal Oxide Semiconductors
Feng, X.; Cadilha Marques, G.; Rasheed, F.; Tahoori, M. B.; Aghassi-Hagmann, J.
2018. 59th Workshop on Microelectronics (2018), Offenburg, Germany, February 1–2, 2018
Feng, X.; Cadilha Marques, G.; Rasheed, F.; Tahoori, M. B.; Aghassi-Hagmann, J.
2018. 59th Workshop on Microelectronics (2018), Offenburg, Germany, February 1–2, 2018