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Focused Ion Beam Systems

Application Examples FIB

The FEI Strata 400S and the Zeiss Auriga 60 Dual Beam FIB are both a combination of a scanning electron microscope (SEM) and a focused ion beam (FIB) system, which allows imaging and structuring of materials at the nanoscale. The focused gallium ion beam can either be used for ion imaging or to cut predefined patterns or images in the surface of a solid. At the same time, the SEM can be used to image the nanostructures generated by FIB. In addition, it is possible to locally deposit C, Pt or W from precursor gases using the electron or ion beam. Additionally, Insulator Enhanced Etching (IEE) using XeF2 is available.

Using this combined approach it is possible to

·       perform cross-sectional structural analysis of surfaces

·       extend the cross-sectional analysis by slice and view techniques to image a complete 3D volume

·       pattern surface at the nanoscale

·       electrically contact selected structures on a sample

·       target preparation of TEM samples and in-situ lift-out



1. Zeiss Auriga 60

 Zeiss Auriga
  • Zeiss Auriga 60
           -       
    FEG

           -       
    In-lens SE, ETD, EsB, 4QBSD, SESI

           -       
    STEM detector

           -       
    EDAX EDX+EBSD detector

           -       
    Omniprobe 400

           -       
    GIS for C, Pt, W and Si

           -       
    GIS for selective carbon etch

           -       
    Gas injection charge compensation
  • Electron Optics
           -       
    1.0 nm at 15kV
           -       
    1.9 nm at 1 kV
           -       
    Voltage: 200V - 30kV
  • Gallium Ion Optics
           -        
    2.5 nm at 30kV
           -       
    Voltage: 200V - 30kV

 

2. FEI Strata 400S

 FEI Strata
  • FEI Strata 400S
           -       
    FEG

           -        
    TLD SE, ETD, BSE, CDEM

           -       
    STEM detector

           -       
    EDAX EDX detector

           -       
    Omniprobe 100

           -       
    GIS for C, Pt, and W

           -       
    GIS for XeF2 etch enhance

           -       
    Flip-stage
  • Electron Optics
           -       
    1.0 nm at 15kV
           -       
    1.9 nm at 1 kV
           -       
    Voltage: 200V - 30kV
  • Gallium Ion Optics
           -        
    7 nm at 30kV
           -       
    Voltage: 2kV - 30kV