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List of Publications


Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors.
Marques, G. C.; Garlapati, S. K.; Dehm, S.; Dasgupta, S.; Aghassi, J.; Tahoori, M. B.
2016. Hochschulen in Baden-Württemberg - 55. Workshop der Multi Projekt Chip Gruppe, Karlsruhe, 5. Februar 2016
Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics.
Cadilha Marques, G.; Garlapati, S. K.; Dehm, S.; Dasgupta, S.; Hahn, H.; Tahoori, M.; Aghassi-Hagmann, J.
2017. Applied physics letters, 111 (10), 102103. doi:10.1063/1.4991919
Room-Temperature Processing of Printed Oxide FETs Using Ultraviolet Photonic Curing.
Garlapati, S. K.; Gebauer, J. S.; Dehm, S.; Bruns, M.; Winterer, M.; Hahn, H.; Dasgupta, S.
2017. Advanced electronic materials, 3 (9), Art. Nr. 1600476. doi:10.1002/aelm.201600476
Hybrid supercapacitors for reversible control of magnetism.
Molinari, A.; Leufke, P. M.; Reitz, C.; Dasgupta, S.; Witte, R.; Kruk, R.; Hahn, H.
2017. Nature Communications, 8, 15339. doi:10.1038/ncomms15339
Electrolyte-Gated FETs Based on Oxide Semiconductors : Fabrication and Modeling.
Marques, G. C.; Garlapati, S. K.; Chatterjee, D.; Dehm, S.; Dasgupta, S.; Aghassi, J.; Tahoori, M. B.
2017. IEEE transactions on electron devices, 64 (1), 279–285. doi:10.1109/TED.2016.2621777
The effect of NaCl on room-temperature-processed indium oxide nanoparticle thin films for printed electronics.
Häming, M.; Baby, T. T.; Garlapati, S. K.; Krause, B.; Hahn, H.; Dasgupta, S.; Weinhardt, L.; Heske, C.
2017. Applied surface science, 396, 912–919. doi:10.1016/j.apsusc.2016.11.060
Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.
Baby, T. T.; Rommel, M.; von Seggern, F.; Friederich, P.; Reitz, C.; Dehm, S.; Kübel, C.; Wenzel, W.; Hahn, H.; Dasgupta, S.
2017. Advanced materials, 29 (4), Art. Nr. 1603858. doi:10.1002/adma.201603858
Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors.
Stoesser, A.; Seggern, F. von; Purohit, S.; Nasr, B.; Kruk, R.; Dehm, S.; Wang, D.; Hahn, H.; Dasgupta, S.
2016. Nanotechnology, 27 (41), Art.Nr.:415205. doi:10.1088/0957-4484/27/41/415205
A new class of epitaxial porphyrin metal-organic framework thin films with extremely high photocarrier generation efficiency: promising materials for all-solid-state solar cells.
Liu, J.; Zhou, W.; Liu, J.; Fujimori, Y.; Higashino, T.; Imahori, H.; Jiang, X.; Zhao, J.; Sakurai, T.; Hattori, Y.; Matsuda, W.; Seki, S.; Garlapati, S. K.; Dasgupta, S.; Redel, E.; Sunag, L.; Woll, C.
2016. Journal of materials chemistry / A, 4 (33), 12739-12747. doi:10.1039/c6ta04898f
Toward On-and-Off Magnetism: Reversible Electrochemistry to Control Magnetic Phase Transitions in Spinel Ferrites.
Dasgupta, S.; Das, B.; Li, Q.; Wang, D.; Baby, T. T.; Indris, S.; Knapp, M.; Ehrenberg, H.; Fink, K.; Kruk, R.; Hahn, H.
2016. Advanced functional materials, 26 (41), 7507-7515. doi:10.1002/adfm.201603411
A general route toward complete room temperature processing of printed and high performance oxide electronics.
Baby, T. T.; Garlapati, S. K.; Dehm, S.; Häming, M.; Kruk, R.; Hahn, H.; Dasgupta, S.
2015. ACS Nano, 9 (3), 3075-3083. doi:10.1021/nn507326z
Ink-jet printed CMOS electronics from oxide semiconductors.
Garlapati, S. K.; Baby, T. T.; Dehm, S.; Hammad, M.; Chakravadhanula, V. S. K.; Kruk, R.; Hahn, H.; Dasgupta, S.
2015. Small, 11, 3591-3596. doi:10.1002/smll.201403288
Exchange processes in the contact formation of Pb electrodes.
Lin, X.; Dasgupta, A.; Xie, F.; Schimmel, T.; Evers, F.; Groß, A.
2014. Electrochimica Acta, 140, 505-510. doi:10.1016/j.electacta.2014.05.160
Dynamic control over electronic transport in 3D bulk nanographene via interfacial charging.
Dasgupta, S.; Wang, D.; Kübel, C.; Hahn, H.; Baumann, F.; Biener, J.
2014. Advanced Functional Materials, 24, 3494-3500. doi:10.1002/adfm.201303534
Intercalation-driven reversible control of magnetism in bulk ferromagnets.
Dasgupta, S.; Das, B.; Knapp, M.; Brand, R. A.; Ehrenberg, H.; Kruk, R.; Hahn, H.
2014. Advanced Materials, 26, 4639-4644. doi:10.1002/adma.201305932
Quantum transport in electrochemical environment.
Dasgupta, A.; Lin, X.; Evers, F.; Groß, A.; Schimmel, T.
2013. 4th International Symposium 'Trends in Nanoscience', Kloster Irsee, February 24- 28, 2013
Elucidating microscopic processes in electro-chemically controlled Pb atomic-scale switches.
Lin, X.; Dasgupta, A.; Xie, F. Q.; Groß, A.; Evers, F.; Schimmel, T.
2013. Schimmel, T. [Hrsg.] Advances in Nanotechnology : Physics, Chemistry, and Biology of Functional Nanostructures ; Results of the third Research Programme Kompetenznetz 'Funktionelle Nanostrukturen' Stuttgart : Baden-Württemberg Stiftung, 2013 (Schriftenreihe der Baden-Württemberg-Stiftung ; 69), 197-219
Temperature tolerance study of high performance electrochemically gated SnO₂ nanowire field-effect transistors.
Basr, B.; Zhao-Karger, Z.; Wang, D.; Kruk, R.; Hahn, H.; Dasgupta, S.
2013. Journal of Materials Chemistry C, 1, 2534-2539. doi:10.1039/c3tc00061c
Quantum size effects in the atomistic structure of armchair nanoribbons.
Dasgupta, A.; Bera, S.; Evers, F.; Van Setten, M. J.
2012. Physical review / B, 85 (12), 125433/1-8. doi:10.1103/PhysRevB.85.125433
Production and characterization of ZnO nanorods from various precursors for single- and multi-rod transistors.
Seggern, Fvon; Dasgupta, S.; Kruk, R.; Hahn, H.
2013. Frühjahrstagung DPG, Sektion Kondensierte Materie, Fachverband Halbleiterphysik, Regensburg, 10.-15. März 2013 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.48(2013), HL 70.9
Synthesis of single crystalline Cu2O nanowires for electrochemically gated PMOS transistors.
Purohit, S.; Stösser, A.; Kruk, R.; Dasgupta, S.; Hahn, H.
2013. Frühjahrstagung DPG, Sektion Kondensierte Materie, Fachverband Halbleiterphysik, Regensburg, 10.-15. März 2013 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.48(2013), HL 70.5
Synthesis and characterization of graphene quantum dots based ink for printable application.
Bay, T. T.; Garlapati, S.; Seggern, Fvon; Kruk, R.; Dasgupta, S.; Hahn, H.
2013. Frühjahrstagung DPG, Sektion Kondensierte Materie, Fachverband Halbleiterphysik, Regensburg, 10.-15. März 2013 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.48(2013), HL 28.5
Printed, high performance inorganic oxide transistors from halide precursors.
Garlapati, S. K.; Mishra, N.; Hahn, R.; Dehm, S.; Kruk, R.; Dasgupta, S.; Hahn, H.
2013. Frühjahrstagung DPG, Sektion Kondensierte Materie, Fachverband Halbleiterphysik, Regensburg, 10.-15. März 2013 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.48(2013), HL 15.8
High speed, low-voltage, and environmentally stable operation of electrochemically gated zinc oxide nanowire field-effect transistors.
Nasr, B.; Wang, D.; Kruk, R.; Rösner, H.; Hahn, H.; Dasgupta, S.
2013. Advanced functional materials, 23, 1750-1758. doi:10.1002/adfm.201202500
Printed and electrochemically gated, high-mobility, inorganic oxide nanoparticle FETs and their suitability for high-frequency applications.
Dasgupta, S.; Stoesser, G.; Schweikert, N.; Hahn, R.; Dehm, S.; Kruk, R.; Hahn, H.
2012. Advanced Functional Materials, 22, 4909-4919. doi:10.1002/adfm.201200951
Macroscopic 3D nanographene with dynamically tunable bulk properties.
Biener, J.; Dasgupta, S.; Shao, L.; Wang, D.; Worsley, M. A.; Wittstock, A.; Lee, J. R. I.; Biener, M. M.; Orme, C. A.; Kucheyev, S. O.; Wood, B. C.; Willey, T. M.; Hamza, A. V.; Weissmüller, J.; Hahn, H.; Baumann, T. F.
2012. Advanced Materials, 24, 5083-5087. doi:10.1002/adma.201202289
Ink-jet printing of conducting nanoinks: processable at room temperature.
Seggen, Fvon; Kruk, R.; Dasgupta, S.; Hahn, H.
2012. Biannual Internat.Conf.on Materials Science Engineering (MSE 2012), Darmstadt, September 25-27, 2012
Printed, high-mobility, inorganic-oxide nanoparticle-based FET with extremely large channel roughness.
Dasgupta, S.; Stösser, G.; Schweikert, N.; Dehm, S.; Kruk, R.; Hahn, H.
2012. Spring Meeting of the European Materials Research Society, Strasbourg, F, May 14-18, 2012
Impedance spectroscopy of printable electrolytes: calculation of frequency dependent effective capacitance.
Stösser, A.; Kruk, R.; Schweikert, N.; Dasgupta, S.; Hahn, H.
2012. 76. Jahrestagung der DPG und DPG-Frühjahrstagung, Fachverband Dielektrische Festkörper, Berlin, D, 25.-30. März 2012 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.47(2012), DF 13.1
Quantum size effects in the atomistic structure of armchair-nanoribbons.
Dasgupta, A.; Bera, S.; Evers, F.; van Setten, M. J.
2011. 1. SPP 1459 Workshop, Burg Rothenfels, 4.-8.Dezember 2011
3D structures of glassy nanographene.
Wang, D.; Dasgupta, S.; Biener, J.; Kübel, C.; Hahn, H.
2011. Internat.Workshop on Current Topics in Transmission Electron Microscopy : Plasmonics and Tomography, Schloss Ringberg, Kreuth, July 27-30, 2011
Synthesis and characterization of functional metal oxide nanowires.
Nasr, B.; Dasgupta, S.; Wang, D.; Kruk, R.; Hahn, H.
2011. Frühjahrstagung DPG, Fachverband Metall- und Materialphysik, Dresden, 13.-18.März 2011 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.46(2011) MM 31.31
Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries.
Nasr, B.; Dasgupta, S.; Wang, D.; Mechau, N.; Kruk, R.; Hahn, H.
2010. Journal of Applied Physics, 108, 103721/1-6. doi:10.1063/1.3511346
Bulk nanostructured materials. Non-mechanical synthesis.
Ivanisenko, Y.; Darbandi, A.; Dasgupta, S.; Kruk, R.; Hahn, H.
2010. Advanced Engineering Materials, 12, 666-676. doi:10.1002/adem.201000131
Correlation between chemical structure and electrical properties in sol-gel derived Al-doped zinc oxide thin films.
Nasr, B.; Dasgupta, S.; Wang, D.; Kruk, R.; Hahn, H.
2010. 10th Internat.Conf.on Nanostructured Materials (Nano 2010), Roma, I, September 13-17, 2010
Optical and electrical characterization of Al doped zinc oxide nanoporous films prepared via sol-gel method.
Nasr, B.; Dasgupta, S.; Kruk, R.; Hahn, H.
2010. Frühjahrstagung DPG, Fachverband Metall- und Materialphysik, Regensburg, 21.-26.März 2010 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.45(2010) MM 51.3
Electron mobility variations in surface-charged indium tin oxide thin films.
Dasgupta, S.; Lukas, M.; Dössel, K.; Kruk, R.; Hahn, H.
2009. Physical Review B, 80, 085425/1-8. doi:10.1103/PhysRevB.80.085425
Tuneable electron transport in metallic nanostructures. Dissertation.
Dasgupta, S.
2009. Wissenschaftliche Berichte, FZKA-7518 (Oktober 2009) Dissertation, Universität Darmstadt 2009
Electrochemically-gated field-effect transistor with indium tin oxide nanoparticles as active layer.
Dasgupta, S.; Dehm, S.; Kruk, R.; Hahn, H.
2009. Breaking Frontiers: Submicron Structures in Physics and Biology : 42nd Zakopane School of Physics, Zakopane, PL, May 19-24, 2008
Electrochemically-gated field-effect transistor with indium tin oxide nanoparticles as active layer.
Dasgupta, S.; Dehm, S.; Kruk, R.; Hahn, H.
2009. Acta Physica Polonica A, 115, 473-76
The tuneable electron mobility in charged indium tin oxide thin films.
Dasgupta, S.; Lukas, M.; Mechau, N.; Kruk, R.; Hahn, H.
2009. Frühjahrstagung DPG, Fachverband Metall- und Materialphysik, Dresden, 22.-27.März 2009 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.44(2009) MM 28.1 European Materials Research Society Spring Meeting, Strasbourg, F, May 26-30, 2008
Electrochemically-gated field-effect transistor with indium tin oxide nanoparticles as active layer.
Dasgupta, S.; Kruk, R.; Hahn, H.
2009. Frühjahrstagung DPG, Fachverband Metall- und Materialphysik, Dresden, 22.-27.März 2009 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.44(2009) MM 8.4
Study on structural and electrical properties of Al-doped ZnO thin films prepared by sol-gel method.
Nasr, B.; Dasgupta, S.; Kruk, R.; Hahn, H.
2009. Frühjahrstagung DPG, Fachverband Metall- und Materialphysik, Dresden, 22.-27.März 2009 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.44(2009) MM 21.3
Electric field induced reversible tuning of resistance of thin gold films.
Dasgupta, S.; Kruk, R.; Ebke, D.; Hütten, A.; Bansal, C.; Hahn, H.
2008. Journal of Applied Physics, 104, 103707/1-5. doi:10.1063/1.3020526
A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating.
Dasgupta, S.; Gottschalk, S.; Kruk, R.; Hahn, H.
2008. Nanotechnology, 19, 435203/1-6. doi:10.1088/0957-4484/19/43/435203
Electrochemically-gated field-effect transistor with indium tin oxide nanoparticles as active layer.
Dasgupta, S.; Gottschalk, S.; Kruk, R.; Hahn, H.
2008. 9th Internat.Conf.on Nanostructured Materials (NANO 2008), Rio de Janeiro, BR, June 1-6, 2008
Charge induced ITO transistor for printable electronics.
Dasgupta, S.; Gottschalk, S.; Kruk, R.; Hahn, H.
2008. 72.Jahrestagung der Deutschen Physikalischen Gesellschaft und DPG Frühjahrstagung des Arbeitskreises Festkörperphysik, Fachverband Metall- und Materialphysik, Berlin, 25.-29.Februar 2008 Verhandlungen der Deutschen Physikalischen Gesellschaft, R.6, B.43(2008) MM 4.2
Mechano-chemical synthesis and characterization of microstructure and magnetic properties of nanocrystalline Mn₁₋ₓZnₓFe₂O₄.
Dasgupta, S.; Eckert, J.; Manna, I.
2007. 3rd Seeheim Conf.on Magnetism (SCM 2007), Frankfurt, August 26-30, 2007
Half-metallic {Co₂MnSi/Co₂FeSi} multilayered Heusler electrodes in magnetic tunnel junctions.
Castrup, A.; Dasgupta, S.; Scherer, T.; Rösner, H.; Ellrich, J.; Kruk, R.; Ghafari, M.; Hahn, H.; Hütten, A.; Ebke, D.; Liu, N. N.; Ennen, I.; Thomas, A.; Schmalhorst, J.; Reiss, G.
2007. Internat.Conf.on Magnetism (ICM 2006), Kyoto, J, August 20-25, 2006
Half-metallic {Co₂MnSi/Co₂FeSi} multilayered Heusler electrodes in magnetic tunnel junctions.
Castrup, A.; Dasgupta, S.; Scherer, T.; Rösner, H.; Ellrich, J.; Kruk, R.; Ghafari, M.; Hahn, H.; Hütten, A.; Ebke, D.; Liu, N. N.; Ennen, I.; Thomas, A.; Schmalhorst, J.; Reiss, G.
2007. Journal of Magnetism and Magnetic Materials, 310, 2009-11. doi:10.1016/j.jmmm.2006.10.920
Mechano-chemical synthesis and characterization of microstructure and magnetic properties of nanocrystalline Mn₁₋ₓZnₓFe₂O₄.
Dasgupta, S.; Kim, K. B.; Ellrich, J.; Eckert, J.; Manna, I.
2006. Journal of Alloys and Compounds, 424, 13-20. doi:10.1016/j.jallcom.2005.12.078