Water-based indium gallium oxide nanoparticle inks cure at just 100 °C, opening the door to flexible substrates. Adding gallium shifts the threshold voltage of printed electrolyte-gated transistors to 0.35 V and cuts off-currents by three orders of magnitude, enabling low-power inverters in both TRL and TTL topologies.

Pass logic-gates built from inkjet-printed electrolyte-gated transistors with indium oxide channels, operating at 1 V. Compared to conventional designs, the approach cuts transistor count by up to 60% and reduces propagation delay in printed digital circuits.

A process design kit for hybrid organic transistors, integrated into a commercial EDA tool, enables a full schematic-to-layout design flow for printed electronics. Using it, we built a 16 × 16 active-matrix pressure sensor with two printed 4 × 16 decoders on flexible foil, cutting wiring to the silicon periphery by a factor of four.

An inkjet-printed tungsten oxide memristor that serves as either non-volatile digital memory or an artificial synapse, selected by the presence or absence of an electroforming step. It shows record endurance for a printed memristor alongside plasticity and signal filtering on biological timescales.

Printing resolution normally sets the floor on how short a printed transistor channel can be. We get around it by laser-writing a 3D polymer reservoir whose platinum-coated inner walls act as the drain and source electrodes, confining the printed indium oxide channel to a 3 µm gap and forming a vertical contact that improves the electrode-semiconductor interface.

A fully inkjet-printed Ag/ZnO/Ag memristor that switches with a single voltage polarity, unlike every other printed metal oxide memristor reported so far. The unipolar behaviour simplifies the peripheral circuitry needed for crossbar integration, and the device holds an ROFF/RON ratio of 10⁷ over 100 pulsed cycles with retention beyond 10⁴ s.