Publikationsliste

Hybrid‐Printed Single‐ChemFET Electronic Nose Enabled by Machine Learning
Yang, H.; Sommer, M.; Singaraju, S. A.; Arya, P.; Marques, G. C.; Fessler, J.; Aghassi-Hagmann, J.; Lemmer, U.
2026. Advanced Sensor Research, 5 (8), e70194. doi:10.1002/adsr.70194

Printed 1T1R Arrays for Next-Generation Electronics
Martins, R. A.; Hu, H.; Pereira, M. E.; Cadilha Marques, G.; Kiazadeh, A.; Aghassi-Hagmann, J.; Carlos, E.
2026. ACS Applied Electronic Materials, 4876−4887. doi:10.1021/acsaelm.6c00778

Predicting new research directions in materials science using large language models and concept graphs
Marwitz, T.; Colsmann, A.; Breitung, B.; Brabec, C.; Kirchlechner, C.; Blasco, E.; Marques, G. C.; Hahn, H.; Hirtz, M.; Levkin, P. A.; Eggeler, Y. M.; Schlöder, T.; Friederich, P.
2026. Nature Machine Intelligence, 8 (4), 535–544. doi:10.1038/s42256-026-01206-y

Fully printable oxide TFTs and memristors on rigid and flexible substrates with excellent integration properties for hybrid systems
Aghassi-Hagmann, J.; Alam, S.; Wang, X.; Hu, H.; Scholz, A.; Neffe, A. T.; Seo, S.; Toma, F. M.; Marques, G. C.
2025. IEEE International Electron Devices Meeting (IEDM 2025), 1–4, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/IEDM50572.2025.11353507

Optimizing the Performance of Printed Indium Oxide Thin-Film Transistors through Gallium Incorporation
Saghafi, M. K.; Kante, M. V.; Shadkam, R.; Boltynjuk, E.; Schweidler, S.; Breitung, B.; Hirtz, M.; Aghassi-Hagmann, J.; Cadilha Marques, G.
2025. Physica status solidi / A, 222 (24), 2500294. doi:10.1002/pssa.202500294

Extended Data for Manuscript "Liquid metal printing for superconducting circuits"
Kreiner, A.; Hussain, N.; Dhundhwal, R.; Duan, H.; Zapata Gonzales, N.; Cadilha Marques, G.; Cubaynes, T.; Scherer, T.; Wernsdorfer, W.; Hirtz, M.; Pop, I. M.; Aghassi-Hagmann, J.; Reisinger, T.
2025, November 26. doi:10.35097/zj91nubn3q790p8h

Synthesis‐Driven Functionality in High‐Entropy Materials
Khandelwal, A. D.; Mathew, G.; Bhattacharya, S.; Colsmann, A.; Marques, G. C.; Botros, M.; Strauss, F.; Xing, J.; Raju, J. S.; Ponnusamy, A.; Aghassi-Hagmann, J.; Brezesinski, T.; Schweidle, S.; Breitung, B.
2025. Small, 21 (44), Art.-Nr.: e01703. doi:10.1002/smll.202501703

Simulation framework for thermal quasi-particle microwave loss in multi-material superconducting quantum circuit elements
Duan, H.; Dhundhwal, R.; Marques, G. C.; Fuchs, D.; Pop, I. M.; Reisinger, T.; Aghassi-Hagmann, J.
2025. IEEE Transactions on Applied Superconductivity, 35 (8), 1–11. doi:10.1109/TASC.2025.3604329

Printed High‐Entropy Prussian Blue Analogs for Advanced Non‐Volatile Memristive Devices
He, Y.; Ting, Y.-Y.; Hu, H.; Diemant, T.; Dai, Y.; Lin, J.; Schweidler, S.; Marques, G. C.; Hahn, H.; Ma, Y.; Brezesinski, T.; Kowalski, P. M.; Breitung, B.; Aghassi-Hagmann, J.
2025. Advanced Materials, 37 (8), Art.-Nr.: 2410060. doi:10.1002/adma.202410060

Predicting New Research Directions in Materials Science using Large Language Models and Concept Graphs
Marwitz, T.; Colsmann, A.; Breitung, B.; Brabec, C.; Kirchlechner, C.; Blasco, E.; Marques, G. C.; Hahn, H.; Hirtz, M.; Levkin, P. A.; Eggeler, Y. M.; Schlöder, T.; Friederich, P.
2025. arxiv. doi:10.48550/arXiv.2506.16824

Inkjet printing of adamantane-type organotin sulfide clusters featuring extreme nonlinear optical properties
Nier, S.; Lohse, Y. R.; Rinn, N.; Cadilha Marques, G.; Rosemann, N. W.; Welzel, M.; Heider, D.; Aghassi-Hagmann, J.; Dehnen, S.
2025. Communications Materials, 6 (1), 197. doi:10.1038/s43246-025-00922-z

Realistic behavioral model for ReRAMs capturing non-idealities
Gulafshan, G.; Hu, H.; Raber-Radakovits, D.; Vassallo, L.; Marques, G. C.; Aghassi-Hagmann, J.; Taherinejad, N.
2025. Communications Materials, 6 (1), 93. doi:10.1038/s43246-025-00807-1

Electrolyte-Gated Indium Oxide Based Transistor on PET Substrate Enabled by Hybrid Process
Alam, S.; Wang, X.; Saghafi, M. K.; Marques, G. C.; Neffe, A. T.; Toma, F. M.; Aghassi-Hagmann, J.
2024. 2024 IEEE International Flexible Electronics Technology Conference (IFETC), Bologna, 15th-18th September 2024, 1–3, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/IFETC61155.2024.10771888

Pass Logic-Gates Based on Electrolyte-Gated Field-Effect Transistors with Metal Oxide Channels
Cheragh, G. M.; Gupta, P.; Marques, G. C.; Matei, G.; Aghassi-Hagmann, J.
2024. 2024 IEEE International Flexible Electronics Technology Conference (IFETC), Bologna, 15th-18th September 2024, 1–4, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/IFETC61155.2024.10771882

Recent progress in the laser microprinting of semiconductors and metals
Somers, P.; Steurer, M.; Kraus, S.; Feist, F.; Breitung, B.; Marques, G. C.; Weinert, B.; Dolle, C.; Müller, E.; Aghassi-Hagmann, J.; Dehnen, S.; Eggeler, Y.; Feldmann, C.; Barner-Kowollik, C.; Wegener, M.
2024. 29th Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM 2024). Ed.: L. Gemini, 18, SPIE. doi:10.1117/12.2692064

Active matrix-based pressure sensor system with a 4 × 16 printed decoder designed with a flexible hybrid organic process design kit
Gupta, P.; Lukosiunas, J.; Marques, G. C.; Raths, S.; Stehlin, S.; Schlisske, S.; Exner, K.; Strunk, K.-P.; Melzer, C.; Erk, P.; Mittermaier, J.; Klotz, A.; Aghassi-Hagmann, J.
2024. Flexible and Printed Electronics, 9 (1), Art.-Nr.: 015006. doi:10.1088/2058-8585/ad20fa

Electron microscopic investigation of photothermal laser printed ZnO nanoarchitectures
Kraft, K.; Grünewald, L.; Quintilla, A.; Müller, E.; Steurer, M.; Somers, P.; Kraus, S.; Feist, F.; Weinert, B.; Breitung, B.; Marques, G. C.; Dehnen, S.; Feldmann, C.; Kowollik, C. B.; Wegener, M.; Aghassi, J.; Eggeler, Y.
2024. (K. Qvortrup & K. Weede, Eds.) BIO Web of Conferences, 129, Article no: 24028. doi:10.1051/bioconf/202412924028

High-entropy materials for energy and electronic applications
Schweidler, S.; Botros, M.; Strauss, F.; Wang, Q.; Ma, Y.; Velasco, L.; Cadilha Marques, G.; Sarkar, A.; Kübel, C.; Hahn, H.; Aghassi-Hagmann, J.; Brezesinski, T.; Breitung, B.
2024. Nature Reviews Materials, 9 (4), 266–281. doi:10.1038/s41578-024-00654-5

Wetting Behavior of Inkjet-Printed Electronic Inks on Patterned Substrates
Arya, P.; Wu, Y.; Wang, F.; Wang, Z.; Cadilha Marques, G.; Levkin, P. A.; Nestler, B.; Aghassi-Hagmann, J.
2024. Langmuir, 40 (10), 5162–5173. doi:10.1021/acs.langmuir.3c03297

Inkjet‐Printed Tungsten Oxide Memristor Displaying Non‐Volatile Memory and Neuromorphic Properties
Hu, H.; Scholz, A.; Dolle, C.; Zintler, A.; Quintilla, A.; Liu, Y.; Tang, Y.; Breitung, B.; Marques, G. C.; Eggeler, Y. M. M.; Aghassi-Hagmann, J.
2024. Advanced Functional Materials, 34 (20), Art.Nr.: 2302290. doi:10.1002/adfm.202302290

Printed Electronic Devices and Systems for Interfacing with Single Cells up to Organoids
Saghafi, M. K.; Vasantham, S. K.; Hussain, N.; Mathew, G.; Colombo, F.; Schamberger, B.; Pohl, E.; Marques, G. C.; Breitung, B.; Tanaka, M.; Bastmeyer, M.; Selhuber-Unkel, C.; Schepers, U.; Hirtz, M.; Aghassi-Hagmann, J.
2023. Advanced Functional Materials, 33 (51), Art.-Nr.: 2308613. doi:10.1002/adfm.202308613

Fully Printed Electrolyte‐Gated Transistor Formed in a 3D Polymer Reservoir with Laser Printed Drain/Source Electrodes (Adv. Mater. Technol. 22/2023)
Cadilha Marques, G.; Yang, L.; Liu, Y.; Wollersen, V.; Scherer, T.; Breitung, B.; Wegener, M.; Aghassi-Hagmann, J.
2023. Advanced Materials Technologies, 8 (22), Art.-Nr.: 2370121. doi:10.1002/admt.202370121

A Fully Inkjet-Printed Unipolar Metal Oxide Memristor for Nonvolatile Memory in Printed Electronics
Hu, H.; Scholz, A.; Liu, Y.; Tang, Y.; Marques, G. C.; Aghassi-Hagmann, J.
2023. IEEE Transactions on Electron Devices, 70 (6), 3051–3056. doi:10.1109/TED.2023.3269405

Fully Printed Electrolyte-Gated Transistor Formed in a 3D Polymer Reservoir with Laser Scribed Drain/Source Electrodes - data
Cadilha Marques, G.
2023. doi:10.35097/939

Fully Printed Electrolyte‐Gated Transistor Formed in a 3D Polymer Reservoir with Laser Printed Drain/Source Electrodes
Cadilha Marques, G.; Yang, L.; Liu, Y.; Wollersen, V.; Scherer, T.; Breitung, B.; Wegener, M.; Aghassi-Hagmann, J.
2023. Advanced Materials Technologies, 8 (22), Art.-Nr.: 2300893. doi:10.1002/admt.202300893

Direct laser printing of functional micro-electronics
Yang, L.; Hu, H.; Scholz, A.; Feist, F.; Cadilha Marques, G.; Bojanowski, N. M.; Blasco, E.; Aghassi-Hagmann, J.; Wegener, M.
2023. SPIE Photonics West (SPIE LASE 2023), San Francisco, CA, USA, January 31–February 2, 2023. doi:10.1117/12.2648197

Laser printed microelectronics
Yang, L.; Hu, H.; Scholz, A.; Feist, F.; Cadilha Marques, G.; Kraus, S.; Bojanowski, N. M.; Blasco, E.; Barner-Kowollik, C.; Aghassi-Hagmann, J.; Wegener, M.
2023. Nature Communications, 14 (1), Art.-Nr.: 1103. doi:10.1038/s41467-023-36722-7

Low-frequency Noise Characteristics of Inkjet-Printed Electrolyte-gated Thin-Film Transistors
Feng, X.; Singaraju, S. A.; Hu, H.; Marques, G. C.; Fu, T.; Baumgartner, P.; Secker, D.; Tahoori, M. B.; Aghassi-Hagmann, J.
2021. IEEE Electron Device Letters, 42 (6), 843–846. doi:10.1109/LED.2021.3072000

Channel Geometry Scaling Effect in Printed Inorganic Electrolyte-Gated Transistors
Rasheed, F.; Rommel, M.; Marques, G. C.; Wenzel, W.; Tahoori, M. B.; Aghassi-Hagmann, J.
2021. IEEE transactions on electron devices, 68 (4), 1866–1871. doi:10.1109/TED.2021.3058929

Inkjet-printed bipolar resistive switching device based on Ag/ZnO/Au structure
Hu, H.; Scholz, A.; Singaraju, S. A.; Tang, Y.; Marques, G. C.; Aghassi-Hagmann, J.
2021. Applied physics letters, 119 (11), 112103–1. doi:10.1063/5.0058526

High‐Resolution Capillary Printing of Eutectic Gallium Alloys for Printed Electronics
Hussain, N.; Fu, T.; Marques, G.; Das, C.; Scherer, T.; Bog, U.; Berner, L.; Wacker, I.; Schröder, R. R.; Aghassi-Hagmann, J.; Hirtz, M.
2021. Advanced materials technologies, 6 (11), Art.-Nr.: 2100650. doi:10.1002/admt.202100650

A Printed Camouflaged Cell against Reverse Engineering of Printed Electronics Circuits
Erozan, A. T.; Weller, D. D.; Feng, Y.; Marques, G. C.; Aghassi-Hagmann, J.; Tahoori, M. B.
2020. IEEE transactions on very large scale integration (VLSI) systems, 28 (11), 2448–2458. doi:10.1109/TVLSI.2020.3022776

ALD-Derived, Low-Density Alumina as Solid Electrolyte in Printed Low-Voltage FETs
Neuper, F.; Marques, G. C.; Singaraju, S. A.; Kruk, R.; Aghassi-Hagmann, J.; Hahn, H.; Breitung, B.
2020. IEEE transactions on electron devices, 67 (9), 3828–3833. doi:10.1109/TED.2020.3005624

Fully Printed Inverters using Metal‐Oxide Semiconductor and Graphene Passives on Flexible Substrates
Singaraju, S. A.; Marques, G. C.; Gruber, P.; Kruk, R.; Hahn, H.; Breitung, B.; Aghassi-Hagmann, J.
2020. Physica status solidi / Rapid research letters, 14 (9), Art.Nr. 2000252. doi:10.1002/pssr.202000252

Printed Logic Gates Based on Enhancement- and Depletion-Mode Electrolyte-Gated Transistors
Marques, G. C.; Birla, A.; Arnal, A.; Dehm, S.; Ramon, E.; Tahoori, M. B.; Aghassi-Hagmann, J.
2020. IEEE transactions on electron devices, 67 (8), 3146–3151. doi:10.1109/TED.2020.3002208

Morphological stability of rod-shaped continuous phases
Wang, F.; Tschukin, O.; Leisner, T.; Zhang, H.; Nestler, B.; Selzer, M.; Cadilha Marques, G.; Aghassi-Hagmann, J.
2020. Acta materialia, 192, 20–29. doi:10.1016/j.actamat.2020.04.028

Circuit Design and Compact Modeling in Printed Electronics Based on Inorganic Materials. PhD dissertation
Cadilha Marques, G.
2020, April 30. Karlsruher Institut für Technologie (KIT). doi:10.5445/IR/1000118801

Fabrication and Modeling of pn-Diodes Based on Inkjet Printed Oxide Semiconductors
Cadilha Marques, G.; Sukuramsyah, A. M.; Arnal Rus, A.; Bolat, S.; Aribia, A.; Feng, X.; Singaraju, S. A.; Ramon, E.; Romanyuk, Y.; Tahoori, M.; Aghassi-Hagmann, J.
2020. IEEE electron device letters, 41 (1), 187–190. doi:10.1109/led.2019.2956346

Nonquasi-Static Capacitance Modeling and Characterization for Printed Inorganic Electrolyte-Gated Transistors in Logic Gates
Feng, X.; Marques, G. C.; Rasheed, F.; Tahoori, M. B.; Aghassi-Hagmann, J.
2019. IEEE transactions on electron devices, 66 (12), 5272–5277. doi:10.1109/TED.2019.2947787

Ink‐Jet Printable, Self‐Assembled, and Chemically Crosslinked Ion‐Gel as Electrolyte for Thin Film, Printable Transistors
Jeong, J.; Marques, G. C.; Feng, X.; Boll, D.; Singaraju, S. A.; Aghassi-Hagmann, J.; Hahn, H.; Breitung, B.
2019. Advanced materials interfaces, 6 (21), 1901074. doi:10.1002/admi.201901074

Impact of Intrinsic Capacitances on the Dynamic Performance of Printed Electrolyte-Gated Inorganic Field Effect Transistors
Feng, X.; Punckt, C.; Marques, G. C.; Hefenbrock, M.; Tahoori, M. B.; Aghassi-Hagmann, J.
2019. IEEE transactions on electron devices, 66 (8), 3365–3370. doi:10.1109/TED.2019.2919933

Progress Report on “From Printed Electrolyte‐Gated Metal‐Oxide Devices to Circuits”
Cadilha Marques, G.; Weller, D.; Erozan, A. T.; Feng, X.; Tahoori, M.; Aghassi-Hagmann, J.
2019. Advanced materials, 31 (26), Article no: 1806483. doi:10.1002/adma.201806483

Influence of Humidity on the Performance of Composite Polymer Electrolyte-Gated Field-Effect Transistors and Circuits
Marques, G. C.; Von Seggern, F.; Dehm, S.; Breitung, B.; Hahn, H.; Dasgupta, S.; Tahoori, M. B.; Aghassi-Hagmann, J.
2019. IEEE transactions on electron devices, 66 (5), 2202–2207. doi:10.1109/TED.2019.2903456

An Inkjet-Printed Low-Voltage Latch Based on Inorganic Electrolyte-Gated Transistors
Weller, D.; Cadilha Marques, G.; Aghassi-Hagmann, J.; Tahoori, M. B.
2018. IEEE electron device letters, 39 (6), 831–834. doi:10.1109/LED.2018.2826361

High performance printed oxide field-effect transistors processed using photonic curing
Garlapati, S. K.; Marques, G. C.; Gebauer, J. S.; Dehm, S.; Bruns, M.; Winterer, M.; Tahoori, M. B.; Aghassi-Hagmann, J.; Hahn, H.; Dasgupta, S.
2018. Nanotechnology, 29 (23), Art.Nr. 235205. doi:10.1088/1361-6528/aab7a2

A Smooth EKV-Based DC Model for Accurate Simulation of Printed Transistors and Their Process Variations
Rasheed, F.; Golanbari, M. S.; Cadilha Marques, G.; Tahoori, M. B.; Aghassi-Hagmann, J.
2018. IEEE transactions on electron devices, 65 (2), 667–673. doi:10.1109/TED.2017.2786160

Analog Properties of Printed Electrolyte-Gated FETs based on Metal Oxide Semiconductors
Feng, X.; Cadilha Marques, G.; Rasheed, F.; Tahoori, M. B.; Aghassi-Hagmann, J.
2018. 59th Workshop on Microelectronics (2018), Offenburg, Germany, February 1–2, 2018

Modeling and Characterization of Low Voltage, Inkjet Printed Devices and Circuits
Marques, G. C.; Rasheed, F.; Breitung, B.; Hahn, H.; Tahoori, M.; Aghassi-Hagmann, J.
2018. Internationale Fachmesse und Kongress für gedruckte Elektronik (LOPEC 2018), Munich, Germany, March 14–15, 2018

Inkjet-Printed EGFET-Based Physical Unclonable Function-Design, Evaluation, and Fabrication
Erozan, A. T.; Marques, G. C.; Golanbari, M. S.; Bishnoi, R.; Dehm, S.; Aghassi-Hagmann, J.; Tahoori, M. B.
2018. IEEE transactions on very large scale integration (VLSI) systems, 26 (12), 2935–2946. doi:10.1109/TVLSI.2018.2866188

From silicon to printed electronics: A coherent modeling and design flow approach based on printed electrolyte gated FETs
Marques, G. C.; Rasheed, F.; Aghassi-Hagmann, J.; Tahoori, M. B.
2018. Proceedings of the 23rd Asia and South Pacific Design Automation Conference (ASP-DAC), Jeju, KOR, January 22-25, 2018, 658–663, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/ASPDAC.2018.8297397

Digital power and performance analysis of inkjet printed ring oscillators based on electrolyte-gated oxide electronics
Cadilha Marques, G.; Garlapati, S. K.; Dehm, S.; Dasgupta, S.; Hahn, H.; Tahoori, M.; Aghassi-Hagmann, J.
2017. Applied physics letters, 111 (10), 102103. doi:10.1063/1.4991919

Electrolyte-Gated FETs Based on Oxide Semiconductors : Fabrication and Modeling
Marques, G. C.; Garlapati, S. K.; Chatterjee, D.; Dehm, S.; Dasgupta, S.; Aghassi, J.; Tahoori, M. B.
2017. IEEE transactions on electron devices, 64 (1), 279–285. doi:10.1109/TED.2016.2621777

Compact modeling of inkjet printed, high mobility, electrolyte-gated transistors
Marques, G. C.; Garlapati, S. K.; Dehm, S.; Dasgupta, S.; Aghassi, J.; Tahoori, M. B.
2016. Hochschulen in Baden-Württemberg - 55. Workshop der Multi Projekt Chip Gruppe, Karlsruhe, 5. Februar 2016