Talk given by Prof. Satoshi Hamaguchi Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Osaka, Japan Abstract: As modern transistor devices in integrated circuits (ICs) continue to shrink and come close to the atomic size, it seems that Moore’s law is nearing its end. This trend is causing a paradigm shift in the semiconductor industry from conventional planar Complementary Metal Oxide Semiconductor (CMOS) devices to devices of non-conventional structures and materials. In fabrication of such devices of the new generation, damage-free processes with atomic-level accuracy are often required, which demands stringent control of plasma processing such as dry etching and plasma enhanced chemical vapor deposition (PECVD) with new gas-phase chemistry. Molecular dynamics (MD) simulation has been used to analyze and design surface chemical reactions in plasma processing used for semiconductor devices. In this presentation, recent progress of MD simulation with interatomic potential models derived from first-principle quantum mechanical calculations is reviewed as a tool to analyze plasma-surface interactions in plasma processing. Comparison of the simulation results with experimental data obtained from beam experiments is also discussed.

This event is part of the eventgroup INT Talks

Homepage
https://www.int.kit.edu/events.php

Speaker
Prof. Satoshi Hamaguchi

Center for Atomic and Molecular Technologies, Osaka University
http://www.camt.eng.osaka-u.ac.jp/hamaguchi/

Organizer
Prof. (apl.) Dr. Wolfgang Wenzel
Institute of Nanotechnology (INT)
Karlsruhe Institute of Technology (KIT)
Eggenstein-Leopoldshafen
Mail: wolfgang wenzel ∂does-not-exist.kit edu

Targetgroup
Interested / Everyone