Talk given by Dr. Artem Fediai Department of Materials Science and Nanotechnology TU Dresden, Germany Abstract: The electrical contacts between two materials with different dimensionality play important role in emerging electronics devices. It is known experimentally that the contact resistance of metal/carbon nanotube (a representative of a 1D/3D contact) or metal/graphene (represents 2D/3D contact) contacts may ultimately dominate the total resistance of a field-effect transistor. In this presentation, I will provide theoretical and numerical details of the model, which allows the fully ab-initio simulation of the carbon nanotube and graphene field effect transistor with sub-10 nm channel and contact lengths ranging from 1 to 100 nm. It is able to explain the scaling of the contact resistance depending on the contact length, metal coverage rate, and various contact metals. In particular, it explains, why chemisorbed metals (Ni, Ti) are always a bad choice for contacting CNT or graphene field-effect transistors, and why the contact resistance of the CNT contacted by means of physisorbed metals (Pt, Pd, Sc, etc.) grows up dramatically for sub-20 nm contact lengths. The theoretical formulation of this so-called ‘modular’ approach will be supplemented with the details of its numerical implementation.

This event is part of the eventgroup INT Talks

Homepage
https://www.int.kit.edu/events.php

Speaker
Dr. Artem Fediai

Department of Materials Science and Nanotechnology, TU Dresden
https://nano.tu-dresden.de/pages/whois_Artem_Fediai.html

Organizer
Prof. (apl.) Dr. Wolfgang Wenzel
Institute of Nanotechnology (INT)
Karlsruhe Institute of Technology (KIT)
Eggenstein-Leopoldshafen
Mail: wolfgang wenzel ∂does-not-exist.kit edu

Targetgroup
Interested / Everyone